1998 European Solid State Device Research Conference Proceedings (Essderc)

1998 European Solid State Device Research Conference Proceedings (Essderc) PDF Author: Editions Frontieres
Publisher: Atlantica Séguier Frontières
ISBN: 9782863322345
Category : Science
Languages : en
Pages :

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ESSDERC'98

ESSDERC'98 PDF Author: Y. Danto
Publisher:
ISBN:
Category :
Languages : en
Pages : 651

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Essderc'98

Essderc'98 PDF Author:
Publisher: Atlantica Séguier Frontières
ISBN: 9782863322345
Category : Semiconductors
Languages : en
Pages : 651

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Tradeoffs and Optimization in Analog CMOS Design

Tradeoffs and Optimization in Analog CMOS Design PDF Author: David Binkley
Publisher: John Wiley & Sons
ISBN: 047003369X
Category : Technology & Engineering
Languages : en
Pages : 632

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Book Description
Analog CMOS integrated circuits are in widespread use for communications, entertainment, multimedia, biomedical, and many other applications that interface with the physical world. Although analog CMOS design is greatly complicated by the design choices of drain current, channel width, and channel length present for every MOS device in a circuit, these design choices afford significant opportunities for optimizing circuit performance. This book addresses tradeoffs and optimization of device and circuit performance for selections of the drain current, inversion coefficient, and channel length, where channel width is implicitly considered. The inversion coefficient is used as a technology independent measure of MOS inversion that permits design freely in weak, moderate, and strong inversion. This book details the significant performance tradeoffs available in analog CMOS design and guides the designer towards optimum design by describing: An interpretation of MOS modeling for the analog designer, motivated by the EKV MOS model, using tabulated hand expressions and figures that give performance and tradeoffs for the design choices of drain current, inversion coefficient, and channel length; performance includes effective gate-source bias and drain-source saturation voltages, transconductance efficiency, transconductance distortion, normalized drain-source conductance, capacitances, gain and bandwidth measures, thermal and flicker noise, mismatch, and gate and drain leakage current Measured data that validates the inclusion of important small-geometry effects like velocity saturation, vertical-field mobility reduction, drain-induced barrier lowering, and inversion-level increases in gate-referred, flicker noise voltage In-depth treatment of moderate inversion, which offers low bias compliance voltages, high transconductance efficiency, and good immunity to velocity saturation effects for circuits designed in modern, low-voltage processes Fabricated design examples that include operational transconductance amplifiers optimized for various tradeoffs in DC and AC performance, and micropower, low-noise preamplifiers optimized for minimum thermal and flicker noise A design spreadsheet, available at the book web site, that facilitates rapid, optimum design of MOS devices and circuits Tradeoffs and Optimization in Analog CMOS Design is the first book dedicated to this important topic. It will help practicing analog circuit designers and advanced students of electrical engineering build design intuition, rapidly optimize circuit performance during initial design, and minimize trial-and-error circuit simulations.

Silicon-Germanium Strained Layers and Heterostructures

Silicon-Germanium Strained Layers and Heterostructures PDF Author: M. Willander
Publisher: Elsevier
ISBN: 008054102X
Category : Technology & Engineering
Languages : en
Pages : 322

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The study of Silicone Germanium strained layers has broad implications for material scientists and engineers, in particular those working on the design and modelling of semi-conductor devices. Since the publication of the original volume in 1994, there has been a steady flow of new ideas, new understanding, new Silicon-Germanium (SiGe) structures and new devices with enhanced performance. Written for both students and senior researchers, the 2nd edition of Silicon-Germanium Strained Layers and Heterostructures provides an essential up-date of this important topic, describing in particular the recent developments in technology and modelling. * Fully-revised and updated 2nd edition incorporating important recent breakthroughs and a complete literature review * The extensive bibliography of over 400 papers provides a comprehensive and coherent overview of the subject * Appropriate for students and senior researchers

ULSI Process Integration II

ULSI Process Integration II PDF Author: Cor L. Claeys
Publisher: The Electrochemical Society
ISBN: 9781566773089
Category : Integrated circuits
Languages : en
Pages : 614

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Nanotechnology and Nanoelectronics

Nanotechnology and Nanoelectronics PDF Author: Wolfgang Fahrner
Publisher: Springer Science & Business Media
ISBN: 3540266216
Category : Technology & Engineering
Languages : en
Pages : 269

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Split a human hair thirty thousand times, and you have the equivalent of a nanometer. The aim of this work is to provide an introduction into nanotechnology for the s- entifically interested. However, such an enterprise requires a balance between comprehensibility and scientific accuracy. In case of doubt, preference is given to the latter. Much more than in microtechnology – whose fundamentals we assume to be known – a certain range of engineering and natural sciences are interwoven in nanotechnology. For instance, newly developed tools from mechanical engine- ing are essential in the production of nanoelectronic structures. Vice versa, - chanical shifts in the nanometer range demand piezoelectric-operated actuators. Therefore, special attention is given to a comprehensive presentation of the matter. In our time, it is no longer sufficient to simply explain how an electronic device operates; the materials and procedures used for its production and the measuring instruments used for its characterization are equally important. The main chapters as well as several important sections in this book end in an evaluation of future prospects. Unfortunately, this way of separating coherent - scription from reflection and speculation could not be strictly maintained. So- times, the complete description of a device calls for discussion of its inherent - tential; the hasty reader in search of the general perspective is therefore advised to study this work’s technical chapters as well.

Proceedings of the Tenth International Workshop on the Physics of Semiconductor Devices : (December 14 - 18, 1999) [New Delhi]. 2(2000)

Proceedings of the Tenth International Workshop on the Physics of Semiconductor Devices : (December 14 - 18, 1999) [New Delhi]. 2(2000) PDF Author: International Workshop on the Physics of Semiconductor Devices
Publisher: Allied Publishers
ISBN: 9788170239987
Category :
Languages : en
Pages :

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Variation Aware Analog and Mixed-Signal Circuit Design in Emerging Multi-Gate CMOS Technologies

Variation Aware Analog and Mixed-Signal Circuit Design in Emerging Multi-Gate CMOS Technologies PDF Author: Michael Fulde
Publisher: Springer Science & Business Media
ISBN: 9048132800
Category : Technology & Engineering
Languages : en
Pages : 127

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Book Description
Since scaling of CMOS is reaching the nanometer area serious limitations enforce the introduction of novel materials, device architectures and device concepts. Multi-gate devices employing high-k gate dielectrics are considered as promising solution overcoming these scaling limitations of conventional planar bulk CMOS. Variation Aware Analog and Mixed-Signal Circuit Design in Emerging Multi-Gate CMOS Technologies provides a technology oriented assessment of analog and mixed-signal circuits in emerging high-k and multi-gate CMOS technologies.

Microfabricated Systems and MEMS VI

Microfabricated Systems and MEMS VI PDF Author: Peter J. Hesketh
Publisher: Electrochemical Society
ISBN: 9781566773720
Category : Microelectromechanical systems
Languages : en
Pages : 252

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